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- W3096349356 abstract "Indium monoselenide (InSe) is an emerging two-dimensional semiconductor with superlative electrical and optical properties whose full potential for high-performance electronics and optoelectronics has been limited by the lack of reliable large-area thin-film synthesis methods. The difficulty in InSe synthesis lies in the complexity of the indium-selenium phase diagram and inadequate understanding of how this complexity is manifested in the growth of thin films. Herein, we present a systematic method for synthesizing InSe thin films by pulsed laser deposition followed by vacuum thermal annealing. The controlled phase evolution of the annealed InSe thin films is elucidated using a comprehensive set of in situ and ex situ characterization techniques. The annealing temperature is identified as the key parameter in controlling phase evolution with pure thin films of InSe developed within a window of 325 °C to 425 °C. To exert finer stoichiometric control over the as-deposited InSe thin film, a co-deposition scheme utilizing InSe and In2Se3 pulsed laser deposition targets is employed to mitigate the effects of mass loss during annealing, ultimately resulting in the synthesis of centimeter-scale, thickness-tunable ε-InSe thin films with high crystallinity. The optimized InSe thin films possess a strong optoelectronic response, exhibited by phototransistors with high responsivities up to 103 A/W. Additionally, enhancement-mode InSe field-effect transistors are fabricated over large areas with device yields exceeding 90% and high on/off current modulation greater than 104, realizing a degree of electronic uniformity previously unattained in InSe thin-film synthesis." @default.
- W3096349356 created "2020-11-09" @default.
- W3096349356 creator A5003586421 @default.
- W3096349356 creator A5008672244 @default.
- W3096349356 creator A5020568063 @default.
- W3096349356 creator A5020649130 @default.
- W3096349356 creator A5027542049 @default.
- W3096349356 creator A5033950805 @default.
- W3096349356 creator A5038226707 @default.
- W3096349356 creator A5042381196 @default.
- W3096349356 creator A5044388112 @default.
- W3096349356 creator A5049182590 @default.
- W3096349356 creator A5054485067 @default.
- W3096349356 creator A5056181207 @default.
- W3096349356 creator A5063517941 @default.
- W3096349356 creator A5065077741 @default.
- W3096349356 creator A5080948356 @default.
- W3096349356 creator A5082147257 @default.
- W3096349356 creator A5083874339 @default.
- W3096349356 creator A5088141052 @default.
- W3096349356 date "2020-11-02" @default.
- W3096349356 modified "2023-10-18" @default.
- W3096349356 title "Large-area optoelectronic-grade InSe thin films via controlled phase evolution" @default.
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- W3096349356 cites W1880646165 @default.
- W3096349356 cites W1966062544 @default.
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- W3096349356 doi "https://doi.org/10.1063/5.0023080" @default.
- W3096349356 hasPublicationYear "2020" @default.
- W3096349356 type Work @default.
- W3096349356 sameAs 3096349356 @default.
- W3096349356 citedByCount "13" @default.