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- W3096475372 abstract "Zirconium hafnium nitride (Zr-Hf-N) thin films were deposited on silicon wafer substrates by reactive co-magnetron sputtering with varying deposition time. The sputtering currents of Zr and Hf targets were kept constant at 800 and 600 mA, whereas the Ar and N2 gas flow rate were fixed at 36 and 3.5 sccm, respectively. The crystal structure determination revealed that the obtained Zr-Hf-N thin films can be indexed as ZrHfN2. Microstructure and surface morphology exhibit columnar structure. The nanohardness measurements suggested that the hardness was exponentially decreasing as the thickness was linearly increased." @default.
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- W3096475372 date "2020-01-01" @default.
- W3096475372 modified "2023-09-27" @default.
- W3096475372 title "The effect of thickness on the properties of Zr-Hf-N thin films prepared by reactive co-magnetron sputtering" @default.
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