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• W3096908560 endingPage "114515" @default.
• W3096908560 startingPage "114515" @default.
• W3096908560 abstract "Two tungsten/tungsten oxide/Indium–Tin Oxide (W/WO3-x/ITO) memristors were fabricated for studying comparatively the effects of W/WO3-x junction on their synaptic performances, in which one is ohmic (Ohm-type device) and the other is rectified (Rec-type device). The characterization results show that Ohm-type device exhibits rich synaptic properties, including the controllable synapse weight update by adjusting the input pulse amplitude, interval, and number, as well as the transformation from the paired-pulse facilitation (PPF) to the paired-pulse depression (PPD) by only changing the pulse width. However, the Rec-type device manifests the nonconventional synaptic behavior and the bowknot-shaped I–V curves. The fitting of I–V curves by the various carrier transport modes demonstrates the bulk mechanism for the Ohm-type device and Schottky mechanism for the Rec-type device. Therefore, we suggest that oxygen vacancy injection and migration in WO3-x layer lead to the presence of synaptic properties in the Ohm-type device, while the rectified W/WO3-x junction and the variable conductance of WO3-x layer lead to the nonconventional synaptic properties and bowknot-shaped I–V curves. This report revealed the complexity of memristors, and emphasizing the necessity to carefully select the material combination and design the device structures for realizing the synaptic properties." @default.
• W3096908560 created "2020-11-09" @default.
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• W3096908560 date "2021-03-01" @default.
• W3096908560 modified "2023-10-16" @default.
• W3096908560 title "Effects of W/ WO3-x junction on synaptic characteristics of W/WO3-x/ITO memristor" @default.
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• W3096908560 doi "https://doi.org/10.1016/j.physe.2020.114515" @default.
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