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- W3097578896 abstract "Resistive switching with a self-rectifying feature is one of the most effective solutions to overcome the crosstalk issue in a crossbar array. In this paper, a memory device based on Pt/TiO x /W structure with self-rectifying property is demonstrated for write-once-read-many-times (WORM) memory application. After programming, the devices exhibit excellent uniformity and keep in the low resistance state (LRS) permanently with a rectification ratio as high as 10 4 at ± 1 V. The self-rectifying resistive switching behavior can be attributed to the Ohmic contact at TiO x /W interface and the Schottky contact at Pt/TiO x interface. The results in this paper demonstrate the potential application of TiO x -based WORM memory device in crossbar arrays." @default.
- W3097578896 created "2020-11-09" @default.
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- W3097578896 date "2021-01-01" @default.
- W3097578896 modified "2023-09-23" @default.
- W3097578896 title "TiO<sub> x </sub>-based self-rectifying memory device for crossbar WORM memory array applications*" @default.
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- W3097578896 doi "https://doi.org/10.1088/1674-1056/abc548" @default.
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