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- W3097714981 abstract "In this article, the ON-state performance limits of 4H-silicon carbide (SiC) IGBTs in field-stop technology are theoretically estimated for the first time and compared against silicon counterparts. The theoretical analysis is based on static modeling of a high-current p-i-n diode and the calculation results are examined with TCAD simulations. Owing to conductivity modulation effect, the ON-state losses of 4H-SiC IGBTs do not show any significant increase with the increase in breakdown voltage (BV). However, the large built-in potential of SiC poses an inherent limit on the reduction of ON-state voltage drop. Compared with 4H-SiC IGBTs, the silicon-based IGBTs exhibit superior ON-state performance limits within the BV range considered, although their drift layer thicknesses are ten times higher than that of 4H-SiC IGBTs. Therefore, silicon IGBTs remain as efficient technologies for enhancing high power conversion efficiency." @default.
- W3097714981 created "2020-11-09" @default.
- W3097714981 creator A5013203535 @default.
- W3097714981 creator A5043707297 @default.
- W3097714981 date "2020-12-01" @default.
- W3097714981 modified "2023-10-17" @default.
- W3097714981 title "Theoretical Analysis of ON-State Performance Limit of 4H-SiC IGBT in Field-Stop Technology" @default.
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- W3097714981 doi "https://doi.org/10.1109/ted.2020.3033268" @default.
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