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- W3097985412 abstract "We investigate the effect of a small leakage current through the gate insulator on the stability of organic single-crystal field-effect transistors (FETs). We find that, irrespective of the specific organic molecule and dielectric used, leakage current flowing through the gate insulator results in an irreversible degradation of the single-crystal FET performance. This degradation occurs even when the leakage current is several orders of magnitude smaller than the source-drain current. The experimental data indicate that a stable operation requires the leakage current to be smaller than 10−9A∕cm2. Our results also suggest that gate leakage currents may determine the lifetime of thin-film transistors used in applications." @default.
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- W3097985412 date "2005-01-17" @default.
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- W3097985412 title "Influence of the gate leakage current on the stability of organic single-crystal field-effect transistors" @default.
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- W3097985412 doi "https://doi.org/10.1063/1.1852089" @default.
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