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• W3098047314 abstract "Depleted CMOS active sensors (DMAPS) are being developed for high-energy particle physics experiments in high radiation environments, such as in the ATLAS High Luminosity Large Hadron Collider (HL-LHC). Since charge collection by drift is mandatory for harsh radiation environment, the application of high bias voltage to high resistive sensor material is needed. In this work, a prototype of a DMAPS was fabricated in a 150nm CMOS process on a substrate with a resistivity of >2 k{Omega}cm that was thinned to 100 {mu}m. Full depletion occurs around 20V, which is far below the breakdown voltage of 110 V. A readout chip has been attached for fast triggered readout. Presented prototype also uses a concept of sub-pixel en/decoding three pixels of the prototype chip are readout by one pixel of the readout chip. Since radiation tolerance is one of the largest concerns in DMAPS, the CCPD_LF chip has been irradiated with X-rays and neutrons up to a total ionization dose of 50 Mrad and a fluence of 10E15neq/cm2, respectively." @default.
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• W3098047314 date "2016-10-01" @default.
• W3098047314 modified "2023-09-23" @default.
• W3098047314 title "Characterization of fully depleted CMOS active pixel sensors on high resistivity substrates for use in a high radiation environment" @default.
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• W3098047314 doi "https://doi.org/10.1109/nssmic.2016.8069902" @default.
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