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- W3098899510 abstract "Doping of semiconductors is central to many electronic devices. However, contrary to inorganic systems, there is still no accepted mechanism for organic semiconductors (OSC) involved in flexible optoelectronic devices. Using a QM/MM implementation of ab initio many-body perturbation theories, combined with an accurate model excitonic Hamiltonian, it is shown that the doping mechanisms in OSC are profoundly original. While the dopant impurity levels can be extremely deep in the gap, room-temperature ionization is made possible thanks to the large electron-hole interaction that stabilizes dopant-to-host charge transfer excitations. As in excitonic solar cells, correlated electron-hole pairs are the key to organic systems." @default.
- W3098899510 created "2020-11-23" @default.
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- W3098899510 date "2017-07-12" @default.
- W3098899510 modified "2023-10-15" @default.
- W3098899510 title "Correlated electron-hole mechanism for molecular doping in organic semiconductors" @default.
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- W3098899510 doi "https://doi.org/10.1103/physrevmaterials.1.025602" @default.
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