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• W3099341949 abstract "We have employed admittance spectroscopy and deep-level transient spectroscopy in order to investigate the electronic properties of ZnO/CdS/Cu(In,Ga)(S,Se)2 heterojunctions and Cr/Cu(In,Ga)(S,Se)2 Schottky contacts. Our work concentrates on the origin of an energy-distributed defect state commonly found in these systems. The activation energy of the defect state addressed continuously shifts upon air annealing or damp-heat treatment and is a valuable measure of the degree of band bending in Cu(In,Ga)(S,Se)2-based junctions. We demonstrate that the band bending within the Cu(In,Ga)(S,Se)2 layer, reported in the literature to become minimal after air exposure, returns after the formation of either a Schottky contact or a heterojunction. The earlier phenomenon turns out to be independent of a surface passivation due to the CdS bath deposition." @default.
• W3099341949 created "2020-11-23" @default.
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• W3099341949 date "2003-05-12" @default.
• W3099341949 modified "2023-10-16" @default.
• W3099341949 title "Band bending independent of surface passivation in ZnO/CdS/Cu(In,Ga)(S,Se)2 heterojunctions and Cr/Cu(In,Ga)(S,Se)2 Schottky contacts" @default.
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• W3099341949 doi "https://doi.org/10.1063/1.1576500" @default.
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