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• W3099537507 abstract "In this study, we investigated the gate voltage dependence of $T_{mathrm c}$ in electrochemically etched FeSe films with an electric-double layer transistor structure. The $T_{mathrm c}^{mathrm {zero}}$ value of the etched FeSe films with a lower gate voltage ($V_{mathrm g}$ = 2.5 and 3.3 V) reaches 46 K, which is the highest value among almost all reported values from the resistivity measurements except for the data by Ge et al. This enhanced $T_{mathrm c}$ remains unchanged even after the discharge process, unlike the results for electrostatic doping without an etching process. Our results suggest that the origin of the increase in $T_{mathrm c}$ is not electrostatic doping but rather the electrochemical reaction at the surface of an etched films." @default.
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• W3099537507 date "2020-07-28" @default.
• W3099537507 modified "2023-10-18" @default.
• W3099537507 title "Enhancement of superconducting transition temperature in electrochemically etched FeSe/LaAlO₃ films" @default.
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• W3099537507 doi "https://doi.org/10.35848/1882-0786/aba649" @default.
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