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• W3099562360 endingPage "880" @default.
• W3099562360 startingPage "875" @default.
• W3099562360 abstract "In this article, single-layer intrinsic and fluorinated graphene were investigated as gate insertion layers in normally-OFF p-gallium nitride (GaN) gate high electron mobility transistors (HEMTs), which wraps around the bottom of the gate forming Ti/graphene/p-GaN at the bottom and Ti/graphene/SiNx on the two sides. Compared to the Au/Ti/p-GaN HEMTs without graphene, the insertion of graphene can increase the I <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>ON</sub> /I <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>OFF</sub> ratios by a factor of 50, increase the V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>TH</sub> by 0.30 V and reduce the OFF-state gate leakage by 50 times. Additionally, this novel gate structure has better thermal stability. After thermal annealing at 350 °C, gate breakdown voltage (BV) holds at 12.1 V. This is considered to be a result of the 0.24 eV increase in Schottky barrier height and the better quality of the Ti/graphene/p-GaN and Ti/graphene/SiNx interfaces. This approach is very effective in improving the I <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>ON</sub> /I <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>OFF</sub> ratio and gate BV of normally-OFF GaN HEMTs." @default.
• W3099562360 created "2020-11-23" @default.
• W3099562360 creator A5009059884 @default.
• W3099562360 creator A5021915978 @default.
• W3099562360 creator A5053597658 @default.
• W3099562360 creator A5063750111 @default.
• W3099562360 creator A5067933839 @default.
• W3099562360 creator A5074471355 @default.
• W3099562360 creator A5083436523 @default.
• W3099562360 date "2020-03-01" @default.
• W3099562360 modified "2023-10-11" @default.
• W3099562360 title "Gate Leakage Suppression and Breakdown Voltage Enhancement in p-GaN HEMTs Using Metal/Graphene Gates" @default.
• W3099562360 cites W1554538624 @default.
• W3099562360 cites W1647263512 @default.
• W3099562360 cites W1967897514 @default.
• W3099562360 cites W1974478896 @default.
• W3099562360 cites W1993017167 @default.
• W3099562360 cites W2009475636 @default.
• W3099562360 cites W2037504047 @default.
• W3099562360 cites W2061788622 @default.
• W3099562360 cites W2074880343 @default.
• W3099562360 cites W2080737894 @default.
• W3099562360 cites W2086183466 @default.
• W3099562360 cites W2097773259 @default.
• W3099562360 cites W2114001304 @default.
• W3099562360 cites W2158892965 @default.
• W3099562360 cites W2305626453 @default.
• W3099562360 cites W2311509203 @default.
• W3099562360 cites W2402764153 @default.
• W3099562360 cites W2461874365 @default.
• W3099562360 cites W2531804863 @default.
• W3099562360 cites W2554381269 @default.
• W3099562360 cites W2597263395 @default.
• W3099562360 cites W2612485695 @default.
• W3099562360 cites W2735385899 @default.
• W3099562360 cites W2760137920 @default.
• W3099562360 cites W2762104466 @default.
• W3099562360 cites W2800507758 @default.
• W3099562360 cites W2887477863 @default.
• W3099562360 cites W2895798558 @default.
• W3099562360 cites W2899624250 @default.
• W3099562360 cites W2912852913 @default.
• W3099562360 cites W578849608 @default.
• W3099562360 doi "https://doi.org/10.1109/ted.2020.2968596" @default.
• W3099562360 hasPublicationYear "2020" @default.
• W3099562360 type Work @default.
• W3099562360 sameAs 3099562360 @default.
• W3099562360 citedByCount "22" @default.
• W3099562360 countsByYear W30995623602020 @default.
• W3099562360 countsByYear W30995623602021 @default.
• W3099562360 countsByYear W30995623602022 @default.
• W3099562360 countsByYear W30995623602023 @default.
• W3099562360 crossrefType "journal-article" @default.
• W3099562360 hasAuthorship W3099562360A5009059884 @default.
• W3099562360 hasAuthorship W3099562360A5021915978 @default.
• W3099562360 hasAuthorship W3099562360A5053597658 @default.
• W3099562360 hasAuthorship W3099562360A5063750111 @default.
• W3099562360 hasAuthorship W3099562360A5067933839 @default.
• W3099562360 hasAuthorship W3099562360A5074471355 @default.
• W3099562360 hasAuthorship W3099562360A5083436523 @default.
• W3099562360 hasBestOaLocation W30995623602 @default.
• W3099562360 hasConcept C119599485 @default.
• W3099562360 hasConcept C127413603 @default.
• W3099562360 hasConcept C139719470 @default.
• W3099562360 hasConcept C162324750 @default.
• W3099562360 hasConcept C171250308 @default.
• W3099562360 hasConcept C184720557 @default.
• W3099562360 hasConcept C192562407 @default.
• W3099562360 hasConcept C2777042071 @default.
• W3099562360 hasConcept C2778871202 @default.
• W3099562360 hasConcept C2779227376 @default.
• W3099562360 hasConcept C30080830 @default.
• W3099562360 hasConcept C49040817 @default.
• W3099562360 hasConceptScore W3099562360C119599485 @default.
• W3099562360 hasConceptScore W3099562360C127413603 @default.
• W3099562360 hasConceptScore W3099562360C139719470 @default.
• W3099562360 hasConceptScore W3099562360C162324750 @default.
• W3099562360 hasConceptScore W3099562360C171250308 @default.
• W3099562360 hasConceptScore W3099562360C184720557 @default.
• W3099562360 hasConceptScore W3099562360C192562407 @default.
• W3099562360 hasConceptScore W3099562360C2777042071 @default.
• W3099562360 hasConceptScore W3099562360C2778871202 @default.
• W3099562360 hasConceptScore W3099562360C2779227376 @default.
• W3099562360 hasConceptScore W3099562360C30080830 @default.
• W3099562360 hasConceptScore W3099562360C49040817 @default.
• W3099562360 hasFunder F4320324202 @default.
• W3099562360 hasIssue "3" @default.
• W3099562360 hasLocation W30995623601 @default.
• W3099562360 hasLocation W30995623602 @default.
• W3099562360 hasLocation W30995623603 @default.
• W3099562360 hasOpenAccess W3099562360 @default.
• W3099562360 hasPrimaryLocation W30995623601 @default.
• W3099562360 hasRelatedWork W1578765583 @default.
• W3099562360 hasRelatedWork W2328592354 @default.
• W3099562360 hasRelatedWork W2377562106 @default.
• W3099562360 hasRelatedWork W2606452130 @default.
• W3099562360 hasRelatedWork W2748952813 @default.
• W3099562360 hasRelatedWork W2899084033 @default.

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