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• W3100224401 abstract "We report on the design, fabrication, and characterization of GaN interband tunnel junction showing forward tunneling characteristics. We have achieved very high forward tunneling currents (153 mA/cm2 at 10 mV, and 17.7 A/cm2 peak current) in polarization-engineered GaN/InGaN/GaN heterojunction diodes grown by plasma assisted molecular beam epitaxy. We also report the observation of repeatable negative differential resistance in interband III-Nitride tunnel junctions, with peak-valley current ratio (PVCR) of 4 at room temperature. The forward current density achieved in this work meets the typical current drive requirements of a multi-junction solar cell." @default.
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• W3100224401 date "2011-12-05" @default.
• W3100224401 modified "2023-09-23" @default.
• W3100224401 title "Demonstration of forward inter-band tunneling in GaN by polarization engineering" @default.
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• W3100224401 doi "https://doi.org/10.1063/1.3666862" @default.
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