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• W3100280051 abstract "A sharp potential barrier at the Si/SiGe interface introduces valley splitting (VS), which lifts the 2-fold valley degeneracy in strained SiGe/Si/SiGe quantum wells (QWs). This work examines in detail the effects of Si/SiGe interface disorder on the VS in an atomistic tight binding approach based on statistical sampling. VS is analyzed as a function of electric field, QW thickness, and simulation domain size. Strong electric fields push the electron wavefunctions into the SiGe buffer and introduce significant VS fluctuations from device to device. A Gedankenexperiment with ordered alloys sheds light on the importance of different bonding configurations on VS. We conclude that a single SiGe band offset and effective mass cannot comprehend the complex Si/SiGe interface interactions that dominate VS." @default.
• W3100280051 created "2020-11-23" @default.
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• W3100280051 date "2012-03-05" @default.
• W3100280051 modified "2023-10-16" @default.
• W3100280051 title "Effects of interface disorder on valley splitting in SiGe/Si/SiGe quantum wells" @default.
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• W3100280051 doi "https://doi.org/10.1063/1.3692174" @default.
• W3100280051 hasPublicationYear "2012" @default.
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