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- W3100295767 abstract "We present the first findings of the vacancy-related centers identified by the electron spin resonance (ESR) and electrically-detected (ED) ESR method in the non-irradiated 6H-SiC nanostructure. This planar 6H-SiC nanostructure represents the ultra-narrow p-type quantum well confined by the δ-barriers heavily doped with boron on the surface of the n-type 6H-SiC (0001) wafer. The EDESR method by measuring the only magnetoresistance of the 6H SiC nanostructure under the high frequency generation from the δ-barriers appears to allow the identification of the silicon vacancy centers as well as the triplet center with spin state S=1. The same triplet center that is characterized by the larger value of the zero-field splitting constant D and anisotropic g-factor is revealed by the ESR (X-band) method. The hyperfine (hf) lines in the ESR and EDESR spectra originating from the hf interaction with the 14N nucleus allow us to attribute this triplet center to the N-VSi defect." @default.
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- W3100295767 date "2014-01-01" @default.
- W3100295767 modified "2023-09-23" @default.
- W3100295767 title "N-VSi-related center in non-irradiated 6H SiC nanostructure" @default.
- W3100295767 doi "https://doi.org/10.1063/1.4865645" @default.
- W3100295767 hasPublicationYear "2014" @default.
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