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- W3100375483 abstract "In this paper, polycrystal Ga2O3 thin films were grown on crystal n+-Si substrates by solution process. The XRD profile revealed that monoclinic β-Ga2O3 and rhombohedral α-Ga2O3 were coexisting in the film. The solution-process Ga2O3 film exhibited an ultrahigh transmittance (>97%) to a wavelength range of 280 nm~800 nm. The optical bandgap of ~5.0 eV and breakdown field of 4.2 MV/cm of the Ga2O3 thin film was obtained. Dielectric parameters such as capacitance, dielectric permittivity and loss tangent were investigated. It was observed that these parameters have a strong dependence on frequency." @default.
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- W3100375483 date "2020-11-01" @default.
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- W3100375483 title "Investigation of Solution-Processed Ga<sub>2</sub>O<sub>3</sub> Thin Films and their Application in Dielectric Materials" @default.
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- W3100375483 doi "https://doi.org/10.4028/www.scientific.net/msf.1014.27" @default.
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