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• W3100401172 abstract "Electron localization in the Si/Ge heterosystem with Si quantum dots (QDs) was studied by transport and electron spin resonance (ESR) measurements. For Si QD structures grown on Ge(111) substrates, the ESR signal with g-factor $g=2.0022pm0.0001$ and ESR line width $Delta Happrox1.2$ Oe was observed and attributed to the electrons localized in QDs. The g-factor value was explained by taking into account the energy band modification due to strain effects and quantum confinement. A strong Ge-Si intermixing in QD structures grown on Ge(001) is assumed to be main reason of unobserved ESR signal from QDs. The transport behavior confirms the efficient electron localization in Si QDs." @default.
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• W3100401172 date "2015-11-16" @default.
• W3100401172 modified "2023-09-23" @default.
• W3100401172 title "Electron localization in self-assembled Si quantum dots grown on Ge(111)" @default.
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• W3100401172 doi "https://doi.org/10.1088/0268-1242/30/12/125013" @default.
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