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- W3100465988 abstract "This chapter contains sections titled: Perspective on Power Devices Principal High-Power Device Characteristics and Requirements Power Device Material Diode (Pn Junction) Transistor Thyristor (without Turn-Off Capability) Gate Turn-Off Thyristor (GTO) MOS Turn-Off Thyristor (MTO) Emitter Turn-Off Thyristor (ETO) Integrated Gate-Commutated Thyristor (GCT and IGCT) Insulated Gate Bipolar Transistor (IGBT) MOS-Controlled Thyristor (MCT) This chapter contains sections titled: References ]]>" @default.
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- W3100465988 date "2009-01-01" @default.
- W3100465988 modified "2023-09-26" @default.
- W3100465988 title "Power Semiconductor Devices" @default.
- W3100465988 doi "https://doi.org/10.1109/9780470546802.ch2" @default.
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