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• W3100506484 abstract "Abstract We demonstrate an AlGaN-channel Schottky barrier diode (SBD) with a molybdenum anode that has excellent performance at high temperatures. The AlGaN-channel SBD shows a suppressed leakage current, compared to a GaN-channel SBD, and the leakage current only increases by 3.5 times when the temperature increases from 300 K to 425 K, while that of the GaN-channel SBD increases by 27.8 times. Meanwhile, the forward current also shows less degeneration at an elevated temperature. Combined with the 1 A forward current of a large-periphery device with a perimeter of 20 mm, the AlGaN-channel SBD shows great potential for use in next-generation power electronics, especially in extreme environments." @default.
• W3100506484 created "2020-11-23" @default.
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• W3100506484 date "2021-03-22" @default.
• W3100506484 modified "2023-10-17" @default.
• W3100506484 title "Investigation of an AlGaN-channel Schottky barrier diode on a silicon substrate with a molybdenum anode" @default.
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• W3100506484 doi "https://doi.org/10.1088/1361-6641/abcbd5" @default.
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