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- W3100542330 abstract "We investigate remote surface roughness (RSR) scattering by the SiO2/HfO2 interface in Fully Depleted Silicon-on-Insulator devices using Non-Equilibrium Green's Functions. We show that the RSR mobility is controlled by cross-correlations between the surface roughness profiles at the Si/SiO2 and SiO2/HfO2 interfaces. Therefore, surface roughness and remote surface roughness cannot be modeled as two independent mechanisms. RSR tends to enhance the total mobility when the Si/SiO2 interface and SiO2 thickness profiles are correlated, and to decrease the total mobility when they are anti-correlated. We discuss the implications for the high-κ/Metal gate technologies." @default.
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- W3100542330 date "2015-01-12" @default.
- W3100542330 modified "2023-09-24" @default.
- W3100542330 title "Remote surface roughness scattering in fully depleted silicon-on-insulator devices with high-<i>κ</i>/SiO2 gate stacks" @default.
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- W3100542330 doi "https://doi.org/10.1063/1.4906199" @default.
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