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• W3100547355 abstract "Progress of silicon-based technology is nearing its physical limit, as the minimum feature size of components is reaching a mere 10 nm. The resistive switching behavior of transition metal oxides and the associated memristor device is emerging as a competitive technology for next-generation electronics. Significant progress has already been made in the past decade, and devices are beginning to hit the market; however, this progress has mainly been the result of empirical trial and error. Hence, gaining theoretical insight is of the essence. In the present work, we report the striking result of a connection between the resistive switching and shock-wave formation, a classic topic of nonlinear dynamics. We argue that the profile of oxygen vacancies that migrate during the commutation forms a shock wave that propagates through a highly resistive region of the device. We validate the scenario by means of model simulations and experiments in a manganese-oxide-based memristor device, and we extend our theory to the case of binary oxides. The shock-wave scenario brings unprecedented physical insight and enables us to rationalize the process of oxygen-vacancy-driven resistive change with direct implications for a key technological aspect—the commutation speed.5 MoreReceived 18 November 2014DOI:https://doi.org/10.1103/PhysRevX.6.011028This article is available under the terms of the Creative Commons Attribution 3.0 License. Further distribution of this work must maintain attribution to the author(s) and the published article’s title, journal citation, and DOI.Published by the American Physical SocietyPhysics Subject Headings (PhySH)Research AreasImpedanceShock wavesPhysical SystemsOxidesTransition metalsCondensed Matter, Materials & Applied PhysicsNonlinear Dynamics" @default.
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• W3100547355 date "2016-03-15" @default.
• W3100547355 modified "2023-10-13" @default.
• W3100547355 title "Shock Waves and Commutation Speed of Memristors" @default.
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• W3100547355 doi "https://doi.org/10.1103/physrevx.6.011028" @default.
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