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- W3100613671 abstract "In this work, the methods of controlled growth of two-dimensional In2Se3 on a Si (111) substrate were studied by reflection high-energy electron diffraction (RHEED). According to experimental data, the deposition rate reduction increases the size of two-dimensional In2Se3 islands. The temperature dependence of the film resistance was measured by the two-contact technique. At temperature decrease near T = 140 K, an abrupt decrease in resistance by a factor of ~ 1000 was found. The reverse transition occurs near T = 180 K. At T = 20–40 K the second hysteresis occurring without the film resistance jump was found." @default.
- W3100613671 created "2020-11-23" @default.
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- W3100613671 date "2020-09-09" @default.
- W3100613671 modified "2023-09-25" @default.
- W3100613671 title "LAYERED IN2SE3 ON SI (111) SURFACE WITH HYSTERESIS OF THE TEMPERATURE DEPENDENCE OF RESISTANCE" @default.
- W3100613671 doi "https://doi.org/10.29003/m1575.silicon-2020/120-122" @default.
- W3100613671 hasPublicationYear "2020" @default.
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