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• W3100674805 abstract "The segregation of As+ ions implanted into thin Er films deposited on n-Si substrates is studied after ErSi2-x formation. The same lowering of the effective Schottky barrier height (SBH) below 0.12 eV is obtained at moderate annealing temperatures, regardless of the redistribution of As dopants at the ErSi2-x/Si interface. On the other hand, if the implanted dose is slightly enhanced, the annealing temperature required to reach sub-0.12-eV effective SBH can be further reduced. This process enables the formation of very low effective SBH ErSi2-x/n-Si contacts with a low thermal budget." @default.
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• W3100674805 date "2011-07-04" @default.
• W3100674805 modified "2023-09-25" @default.
• W3100674805 title "Very low effective Schottky barrier height for erbium disilicide contacts on <i>n</i>-Si through arsenic segregation" @default.
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• W3100674805 doi "https://doi.org/10.1063/1.3608159" @default.
• W3100674805 hasPublicationYear "2011" @default.
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