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- W3100688111 abstract "We report the development of superconducting tantalum nitride (TaNx) normal metal-insulator-superconductor (NIS) tunnel junctions. For the insulating barrier, we used both AlOx and TaOx (Cu-AlOx-Al-TaNx and Cu-TaOx-TaNx), with both devices exhibiting temperature dependent current-voltage characteristics which follow the simple one-particle tunneling model. The superconducting gap follows a BCS type temperature dependence, rendering these devices suitable for sensitive thermometry and bolometry from the superconducting transition temperature TC of the TaNx film at ∼5 K down to ∼0.5 K. Numerical simulations were also performed to predict how junction parameters should be tuned to achieve electronic cooling at temperatures above 1 K." @default.
- W3100688111 created "2020-11-23" @default.
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- W3100688111 date "2014-03-24" @default.
- W3100688111 modified "2023-09-27" @default.
- W3100688111 title "Superconducting tantalum nitride-based normal metal-insulator-superconductor tunnel junctions" @default.
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- W3100688111 doi "https://doi.org/10.1063/1.4869563" @default.
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