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- W3100769439 abstract "AbstractThe p-n junction and metal–semiconductor junction are the basic building blocks of modern electronic devices such as diodes and transistors. Under the equilibrium condition, a potential barrier is formed at these junctions such that no net charge carriers flow across the junction. An externally applied forward bias is needed to cause the flow of charged carriers and, thus, the current. In semiconductor heterostructures, as discussed in this chapter, due to the formation of energy band discontinuities in both conduction and valence bands at the heterojunction, extra energy barriers exist without resort to p-n junctions. For example, under the equilibrium condition, type-I n-N and p-P-type heterostructures can block flows of holes and electrons, respectively. Furthermore, a triangular potential well is formed at the heterojunction to generate 2D electron gas in n-N-type heterostructures and 2D hole gas in p-P-type heterostructures. One important feature of heterostructures is the formation of the quantum well that has a far-reaching impact on modern electronic and photonic device advancements. In this chapter, the electrical properties of heterojunctions will be developed first, followed by the analysis of quantum-well heterostructures and superlattices." @default.
- W3100769439 created "2020-11-23" @default.
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- W3100769439 date "2020-01-01" @default.
- W3100769439 modified "2023-09-27" @default.
- W3100769439 title "Electrical Properties of Compound Semiconductor Heterostructures" @default.
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- W3100769439 doi "https://doi.org/10.1007/978-3-030-51903-2_7" @default.
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