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• W3100851012 abstract "Serial connection of multiple memory cells using perpendicular magnetic tunnel junctions (pMTJs) is proposed as a way to increase magnetic random access memory (MRAM) storage density. A multibit storage element is designed using pMTJs fabricated on a single wafer stack, with serial connections realized using top-to-bottom vias. The tunneling magnetoresistance effect above 130%, current induced magnetization switching in zero external magnetic field, and stability diagram analysis of single, two-bit, and three-bit cells are presented together with thermal stability. The proposed design is easy to manufacture and can lead to an increased capacity of future MRAM devices." @default.
• W3100851012 created "2020-11-23" @default.
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• W3100851012 date "2019-06-14" @default.
• W3100851012 modified "2023-10-17" @default.
• W3100851012 title "Multi-bit MRAM storage cells utilizing serially connected perpendicular magnetic tunnel junctions" @default.
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• W3100851012 doi "https://doi.org/10.1063/1.5097748" @default.
• W3100851012 hasPublicationYear "2019" @default.
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