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• W3100948541 abstract "The exchange bias effect is an essential component of magnetic memory and spintronic devices. Whereas recent research has shown that anisotropies perpendicular to the device plane provide superior stability against thermal noise, it has proven remarkably difficult to realize perpendicular exchange bias in thin-film structures. Here we demonstrate a strong perpendicular exchange bias effect in heterostructures of the quasi-two-dimensional canted antiferromagnet ${mathrm{La}}_{2}{mathrm{CuO}}_{4}$ and ferromagnetic $(mathrm{La},mathrm{Sr}){mathrm{MnO}}_{3}$ synthesized by ozone-assisted molecular beam epitaxy. The magnitude of this effect can be controlled via the doping level of the cuprate layers. Canted antiferromagnetism of layered oxides is thus a new and potentially powerful source of uniaxial anisotropy in magnetic devices." @default.
• W3100948541 created "2020-11-23" @default.
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• W3100948541 date "2019-08-30" @default.
• W3100948541 modified "2023-09-27" @default.
• W3100948541 title "Tunable perpendicular exchange bias in oxide heterostructures" @default.
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• W3100948541 doi "https://doi.org/10.1103/physrevmaterials.3.084420" @default.
• W3100948541 hasPublicationYear "2019" @default.
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