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• W3100993759 endingPage "1904465" @default.
• W3100993759 startingPage "1904465" @default.
• W3100993759 abstract "Two-dimensional (2D) layered materials are promising for replacing Si to overcome the scaling limit of recent ~5 nm-length metal-oxide-semiconductor field-effect transistors (MOSFETs). However, the insulator/2D channel interface severely degrades the performance of 2D-based MOSFETs, and the origin of the degradation remains largely unexplored. Here, we present the full energy spectra of the interface state densities (Dit) for both n- and p- MoS2 FETs, based on the comprehensive and systematic studies, i.e., thickness range from monolayer to bulk and various gate stack structures including 2D heterostructure with h-BN as well as typical high-k top-gate structure. For n-MoS2, Dit around the mid gap is drastically reduced to 5*10^11 cm-2eV-1 for the heterostructure FET with h-BN from 5*10^12 cm-2eV-1 for the high-k top-gate MoS2 FET. On the other hand, Dit remains high, ~10^13 cm-2eV-1, even for the heterostructure FET for p-MoS2. The systematic study elucidates that the strain induced externally through the substrate surface roughness and high-k deposition process is the origin for the interface degradation on the conduction band side, while sulfur-vacancy-induced defect-states dominate the interface degradation on the valance band side. The present understanding on the interface properties provides the key to further improving the performance of 2D FETs." @default.
• W3100993759 created "2020-11-23" @default.
• W3100993759 creator A5008333275 @default.
• W3100993759 creator A5010768366 @default.
• W3100993759 creator A5041573207 @default.
• W3100993759 creator A5053524324 @default.
• W3100993759 date "2019-09-30" @default.
• W3100993759 modified "2023-10-17" @default.
• W3100993759 title "Full Energy Spectra of Interface State Densities for <i>n</i> ‐ and <i>p</i> ‐type MoS ₂ Field‐Effect Transistors" @default.
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• W3100993759 doi "https://doi.org/10.1002/adfm.201904465" @default.
• W3100993759 hasPublicationYear "2019" @default.
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