Matches in SemOpenAlex for { <https://semopenalex.org/work/W310099517> ?p ?o ?g. }
Showing items 1 to 73 of
73
with 100 items per page.
- W310099517 abstract "Gas and oxide adsorption and their impact on the properties of semiconductor interfaces were investigated at the atomic level with both experimental and theoretical techniques. Two types of semiconductors were studied, an organic semiconductor, employed in chemical field effect transistors (chemFETs) and alternative channel materials for metal oxide field effect transistors (MOSFETs). Adsorption of nitric oxide (NO) on iron phthalocyanine (FePc), an organic semiconductor, was explored to determine the adsorption mechanism of NO. King and Wells sticking measurements were performed on ordered monolayer, multilayer FePc and quasi-amorphous tetra-t-butyl FePc multilayer thin films to determine the impact of surface order and thickness on adsorption. Density functional theory (DFT) results show there is a deep chemisorption well at the metal center. The metal centers are a small fraction of the surface (3%), but the initial sticking probability was 40% at low surface temperature and low incident beam energy. Both the experimental and theoretical data supports molecular NO sticking onto FePc via physisorption to the aromatic periphery followed by diffusion to the Fe metal center, a multiple pathway precursor-mediated chemisorption. To understand the chemical dynamics of bonding at the oxide/semiconductor interface, the adsorption of oxygen, nitrogen, and high- [kappa] dielectrics onto alternative high mobility channel materials, Ge and InAs, was investigated to identify passive oxide/semiconductor interfaces via DFT. DFT modeling of experimental results found oxygen exposure on Ge(0 0 1)-(4 x 2) pins the Fermi level near the valence band due to generation of Ge ad-atoms and formation of a suboxide. Similarly, DFT modeling demonstrated that the nitrided Ge(001) surface was pinned due to generation of Ge ad-atoms and formation of a subnitride. For III-V materials, a comparison was made of the geometric and electronic structures of ordered HfO₂ and ZrO₂ monolayers on InAs(0 0 1)-(4 x 2). DFT calculations showed that both high-k oxides were able to electronically passivate the InAs(0 0 1)-(4 x 2) surface, decreasing density of states at the Fermi level by removal of dangling bonds and strained bonds on the semiconductor substrate. With a greater atomic understanding of the oxide-semiconductor interfaces, the presented results can help guide future device engineering efforts" @default.
- W310099517 created "2016-06-24" @default.
- W310099517 creator A5061430365 @default.
- W310099517 date "2010-01-01" @default.
- W310099517 modified "2023-09-27" @default.
- W310099517 title "Chemical dynamics and bonding at gas/semiconductor and oxide/semiconductor interfaces" @default.
- W310099517 hasPublicationYear "2010" @default.
- W310099517 type Work @default.
- W310099517 sameAs 310099517 @default.
- W310099517 citedByCount "0" @default.
- W310099517 crossrefType "journal-article" @default.
- W310099517 hasAuthorship W310099517A5061430365 @default.
- W310099517 hasConcept C108225325 @default.
- W310099517 hasConcept C113196181 @default.
- W310099517 hasConcept C147597530 @default.
- W310099517 hasConcept C147789679 @default.
- W310099517 hasConcept C150394285 @default.
- W310099517 hasConcept C152365726 @default.
- W310099517 hasConcept C159467904 @default.
- W310099517 hasConcept C162711632 @default.
- W310099517 hasConcept C168900304 @default.
- W310099517 hasConcept C178790620 @default.
- W310099517 hasConcept C185592680 @default.
- W310099517 hasConcept C191897082 @default.
- W310099517 hasConcept C192562407 @default.
- W310099517 hasConcept C2779851234 @default.
- W310099517 hasConcept C33790079 @default.
- W310099517 hasConcept C49040817 @default.
- W310099517 hasConcept C9950777 @default.
- W310099517 hasConceptScore W310099517C108225325 @default.
- W310099517 hasConceptScore W310099517C113196181 @default.
- W310099517 hasConceptScore W310099517C147597530 @default.
- W310099517 hasConceptScore W310099517C147789679 @default.
- W310099517 hasConceptScore W310099517C150394285 @default.
- W310099517 hasConceptScore W310099517C152365726 @default.
- W310099517 hasConceptScore W310099517C159467904 @default.
- W310099517 hasConceptScore W310099517C162711632 @default.
- W310099517 hasConceptScore W310099517C168900304 @default.
- W310099517 hasConceptScore W310099517C178790620 @default.
- W310099517 hasConceptScore W310099517C185592680 @default.
- W310099517 hasConceptScore W310099517C191897082 @default.
- W310099517 hasConceptScore W310099517C192562407 @default.
- W310099517 hasConceptScore W310099517C2779851234 @default.
- W310099517 hasConceptScore W310099517C33790079 @default.
- W310099517 hasConceptScore W310099517C49040817 @default.
- W310099517 hasConceptScore W310099517C9950777 @default.
- W310099517 hasLocation W3100995171 @default.
- W310099517 hasOpenAccess W310099517 @default.
- W310099517 hasPrimaryLocation W3100995171 @default.
- W310099517 hasRelatedWork W1474478213 @default.
- W310099517 hasRelatedWork W1987178575 @default.
- W310099517 hasRelatedWork W2009688137 @default.
- W310099517 hasRelatedWork W2009974387 @default.
- W310099517 hasRelatedWork W2014699993 @default.
- W310099517 hasRelatedWork W2018319494 @default.
- W310099517 hasRelatedWork W2024861462 @default.
- W310099517 hasRelatedWork W2035529205 @default.
- W310099517 hasRelatedWork W2048586160 @default.
- W310099517 hasRelatedWork W2053072821 @default.
- W310099517 hasRelatedWork W2063644269 @default.
- W310099517 hasRelatedWork W2069001286 @default.
- W310099517 hasRelatedWork W2073074066 @default.
- W310099517 hasRelatedWork W2074659977 @default.
- W310099517 hasRelatedWork W2088615595 @default.
- W310099517 hasRelatedWork W2089894274 @default.
- W310099517 hasRelatedWork W2161955491 @default.
- W310099517 hasRelatedWork W2163555343 @default.
- W310099517 hasRelatedWork W2911803206 @default.
- W310099517 hasRelatedWork W432298208 @default.
- W310099517 isParatext "false" @default.
- W310099517 isRetracted "false" @default.
- W310099517 magId "310099517" @default.
- W310099517 workType "article" @default.