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• W3102041699 abstract "Gate bias stress instability in organic field-effect transistors (OFETs) is a major conceptual and device issue. This effect manifests itself by an undesirable shift of the transfer characteristics and is associated with long term charge trapping. We study the role of the dielectric and the semiconductor separately by producing OFETs with the same semiconductor (pentacene) combined with different dielectrics (SiO2 and Cytop). We show that it is possible to fabricate devices which are immune to gate bias stress. For other material combinations, charge trapping occurs in the semiconductor alone or in the dielectric." @default.
• W3102041699 created "2020-11-23" @default.
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• W3102041699 date "2011-08-22" @default.
• W3102041699 modified "2023-10-17" @default.
• W3102041699 title "Gate bias stress in pentacene field-effect-transistors: Charge trapping in the dielectric or semiconductor" @default.
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• W3102041699 doi "https://doi.org/10.1063/1.3628297" @default.
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