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- W3103185731 abstract "In this work, the dependences of the elastic stresses on the thickness of the deposited material during the growth of germanium quantum dots on silicon have been determined by the fast electron diffraction method. It is shown that the relative value substrate in this system reaches 12.5%." @default.
- W3103185731 created "2020-11-23" @default.
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- W3103185731 date "2020-09-09" @default.
- W3103185731 modified "2023-10-18" @default.
- W3103185731 title "DEPENDENCE OF ELASTIC STRESSES ON THE THICKNESS OF THE DEPOSITED MATERIAL FOR GERMANIUM GROWTH ON SILICON" @default.
- W3103185731 doi "https://doi.org/10.29003/m1594.silicon-2020/183-185" @default.
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