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- W3103248420 endingPage "053015" @default.
- W3103248420 startingPage "053015" @default.
- W3103248420 abstract "We have studied the resistance of a large number of highly oriented graphite samples with areas ranging from several mm2 to a few μm2 and thickness from ∼ 10 nm to several tens of micrometers. The measured resistance can be explained by the parallel contribution of semiconducting graphene layers with low carrier density <109 cm−2 and the one from metallic-like internal interfaces. The results indicate that ideal graphite with Bernal stacking structure is a semiconductor with a narrow band gap Eg ∼ 40 meV." @default.
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- W3103248420 date "2012-05-15" @default.
- W3103248420 modified "2023-10-17" @default.
- W3103248420 title "Evidence for semiconducting behavior with a narrow band gap of Bernal graphite" @default.
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- W3103248420 doi "https://doi.org/10.1088/1367-2630/14/5/053015" @default.
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