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• W3103280429 abstract "The integration of Metal Organic Chemical Vapor Deposition (MOCVD) grown group III-A nitride device stacks on Si (111) substrates is critically dependent on the quality of the first AlN buffer layer grown. A Si surface that is both oxide-free and smooth is a primary requirement for nucleating such layers. A single parameter, the AlN layer growth stress, is shown to be an early (within 50 nm), clear (&lt;0.5 GPa versus &gt;1 GPa), and fail-safe indicator of the pre-growth surface, and the AlN quality required for successful epitaxy. Grain coalescence model for stress generation is used to correlate growth stress, the AlN-Si interface, and crystal quality." @default.
• W3103280429 created "2020-11-23" @default.
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• W3103280429 date "2013-11-18" @default.
• W3103280429 modified "2023-09-24" @default.
• W3103280429 title "An early <i>in-situ</i> stress signature of the AlN-Si pre-growth interface for successful integration of nitrides with (111) Si" @default.
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• W3103280429 doi "https://doi.org/10.1063/1.4831968" @default.
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