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• W3103309093 abstract "We investigate the magnetic field dependence of the Hall and the bend resistances for a ballistic Hall bar structure containing a pn-junction sculptured from a bilayer of graphene. The electric response is obtained using the billiard model, and we investigate the cases of bilayer graphene with and without a band gap. Two different conduction regimes are possible: (i) both sides of the junction have the same carrier type and (ii) one side of the junction is n-type while the other one is p-type. The first case shows Hall plateau-like features in the Hall resistance that fade away as the band gap opens. The second case exhibits a bend resistance that is asymmetric in magnetic field as a consequence of snake states along the pn-interface, where the maximum is shifted away from zero magnetic field." @default.
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• W3103309093 date "2013-09-21" @default.
• W3103309093 modified "2023-09-26" @default.
• W3103309093 title "Bilayer graphene Hall bar with a pn-junction" @default.
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• W3103309093 doi "https://doi.org/10.1063/1.4821264" @default.
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