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• W3103600577 abstract "Half-Heusler YPtSb thin films were fabricated by magnetron co-sputtering method on MgO-buffered SiO2/Si(001) substrates. X-ray diffraction pattern and Energy dispersive X-ray spectroscopy confirmed the high-quality growth and stoichiometry. The temperature dependence of the resistivity shows a semiconducting-type behavior down to low temperature. The Hall mobility was determined to be 450 cm2/Vs at 300K, which is much higher than the bulk value (300 cm2/Vs). In-plane magnetoresistance (MR) measurements with fields applied along and perpendicular to the current direction show opposite MR signs, which suggests the possible existence of the topological surface states." @default.
• W3103600577 created "2020-11-23" @default.
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• W3103600577 date "2012-11-15" @default.
• W3103600577 modified "2023-10-16" @default.
• W3103600577 title "Fabrication and characterization of the gapless half-Heusler YPtSb thin films" @default.
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• W3103600577 doi "https://doi.org/10.1063/1.4766902" @default.
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