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• W3104105770 abstract "We demonstrate room-temperature electroluminescence (EL) from light-emitting diodes (LEDs) on highly strained germanium (Ge) membranes. An external stressor technique was employed to introduce a 0.76% bi-axial tensile strain in the active region of a vertical PN junction. Electrical measurements show an on-off ratio increase of one order of magnitude in membrane LEDs compared to bulk. The EL spectrum from the 0.76% strained Ge LED shows a 100 nm redshift of the center wavelength because of the strain-induced direct band gap reduction. Finally, using tight-binding and finite-difference time domain simulations, we discuss the implications for highly efficient Ge lasers." @default.
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• W3104105770 date "2012-03-26" @default.
• W3104105770 modified "2023-10-16" @default.
• W3104105770 title "Electroluminescence from strained germanium membranes and implications for an efficient Si-compatible laser" @default.
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• W3104105770 doi "https://doi.org/10.1063/1.3699224" @default.
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