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• W3104715524 abstract "Heteroepitaxial growth of selected group IV-VI nitrides on various orientations of sapphire (α-Al2O3) is demonstrated using atomic layer deposition. High quality, epitaxial films are produced at significantly lower temperatures than required by conventional deposition methods. Characterization of electrical and superconducting properties of epitaxial films reveals a reduced room temperature resistivity and increased residual resistance ratio for films deposited on sapphire compared to polycrystalline samples deposited concurrently on fused quartz substrates." @default.
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• W3104715524 date "2013-11-18" @default.
• W3104715524 modified "2023-09-26" @default.
• W3104715524 title "Heteroepitaxy of group IV-VI nitrides by atomic layer deposition" @default.
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• W3104715524 doi "https://doi.org/10.1063/1.4831977" @default.
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