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• W3105973609 endingPage "041002" @default.
• W3105973609 startingPage "041002" @default.
• W3105973609 abstract "We present a new fabrication method for epitaxial graphene on SiC which enables the growth of ultra-smooth defect- and bilayer-free graphene sheets with an unprecedented reproducibility, a necessary prerequisite for wafer-scale fabrication of high quality graphene-based electronic devices. The inherent but unfavorable formation of high SiC surface terrace steps during high temperature sublimation growth is suppressed by rapid formation of the graphene buffer layer which stabilizes the SiC surface. The enhanced nucleation is enforced by decomposition of deposited polymer adsorbate which acts as a carbon source. Unique to this method are the conservation of mainly 0.25 and 0.5 nm high surface steps and the formation of bilayer-free graphene on an area only limited by the size of the sample. This makes the polymer-assisted sublimation growth technique a promising method for commercial wafer scale epitaxial graphene fabrication. The extraordinary electronic quality is evidenced by quantum resistance metrology at 4.2 K showing ultra-high precision and high electron mobility on mm scale devices comparable to state-of-the-art graphene." @default.
• W3105973609 created "2020-11-23" @default.
• W3105973609 creator A5013203191 @default.
• W3105973609 creator A5013296084 @default.
• W3105973609 creator A5016300032 @default.
• W3105973609 creator A5029101403 @default.
• W3105973609 creator A5057276102 @default.
• W3105973609 creator A5059863344 @default.
• W3105973609 creator A5066279529 @default.
• W3105973609 creator A5067699909 @default.
• W3105973609 creator A5074410020 @default.
• W3105973609 creator A5075471824 @default.
• W3105973609 creator A5076503488 @default.
• W3105973609 creator A5078027374 @default.
• W3105973609 creator A5078486757 @default.
• W3105973609 creator A5083815082 @default.
• W3105973609 creator A5087320960 @default.
• W3105973609 date "2016-09-26" @default.
• W3105973609 modified "2023-10-05" @default.
• W3105973609 title "Comeback of epitaxial graphene for electronics: large-area growth of bilayer-free graphene on SiC" @default.
• W3105973609 cites W1978515977 @default.
• W3105973609 cites W1981288837 @default.
• W3105973609 cites W1983208977 @default.
• W3105973609 cites W1983533955 @default.
• W3105973609 cites W1984256333 @default.
• W3105973609 cites W1993911750 @default.
• W3105973609 cites W1997309206 @default.
• W3105973609 cites W2006850516 @default.
• W3105973609 cites W2013036591 @default.
• W3105973609 cites W2016944831 @default.
• W3105973609 cites W2021001395 @default.
• W3105973609 cites W2022365350 @default.
• W3105973609 cites W2039524006 @default.
• W3105973609 cites W2040423379 @default.
• W3105973609 cites W2041506825 @default.
• W3105973609 cites W2043060309 @default.
• W3105973609 cites W2046236847 @default.
• W3105973609 cites W2050025159 @default.
• W3105973609 cites W2055319809 @default.
• W3105973609 cites W2058451568 @default.
• W3105973609 cites W2062757334 @default.
• W3105973609 cites W2064279871 @default.
• W3105973609 cites W2071957899 @default.
• W3105973609 cites W2074919794 @default.
• W3105973609 cites W2079522418 @default.
• W3105973609 cites W2081541767 @default.
• W3105973609 cites W2083855839 @default.
• W3105973609 cites W2083970262 @default.
• W3105973609 cites W2084075657 @default.
• W3105973609 cites W2092727859 @default.
• W3105973609 cites W2092933892 @default.
• W3105973609 cites W2095809347 @default.
• W3105973609 cites W2109063544 @default.
• W3105973609 cites W2111090432 @default.
• W3105973609 cites W2121772044 @default.
• W3105973609 cites W2122131294 @default.
• W3105973609 cites W2129706268 @default.
• W3105973609 cites W2134421678 @default.
• W3105973609 cites W2143161893 @default.
• W3105973609 cites W2143625286 @default.
• W3105973609 cites W2164447696 @default.
• W3105973609 cites W2235679284 @default.
• W3105973609 cites W2313533725 @default.
• W3105973609 cites W2331988897 @default.
• W3105973609 cites W2597242839 @default.
• W3105973609 cites W3104627621 @default.
• W3105973609 cites W3121857261 @default.
• W3105973609 doi "https://doi.org/10.1088/2053-1583/3/4/041002" @default.
• W3105973609 hasPublicationYear "2016" @default.
• W3105973609 type Work @default.
• W3105973609 sameAs 3105973609 @default.
• W3105973609 citedByCount "128" @default.
• W3105973609 countsByYear W31059736092017 @default.
• W3105973609 countsByYear W31059736092018 @default.
• W3105973609 countsByYear W31059736092019 @default.
• W3105973609 countsByYear W31059736092020 @default.
• W3105973609 countsByYear W31059736092021 @default.
• W3105973609 countsByYear W31059736092022 @default.
• W3105973609 countsByYear W31059736092023 @default.
• W3105973609 crossrefType "journal-article" @default.
• W3105973609 hasAuthorship W3105973609A5013203191 @default.
• W3105973609 hasAuthorship W3105973609A5013296084 @default.
• W3105973609 hasAuthorship W3105973609A5016300032 @default.
• W3105973609 hasAuthorship W3105973609A5029101403 @default.
• W3105973609 hasAuthorship W3105973609A5057276102 @default.
• W3105973609 hasAuthorship W3105973609A5059863344 @default.
• W3105973609 hasAuthorship W3105973609A5066279529 @default.
• W3105973609 hasAuthorship W3105973609A5067699909 @default.
• W3105973609 hasAuthorship W3105973609A5074410020 @default.
• W3105973609 hasAuthorship W3105973609A5075471824 @default.
• W3105973609 hasAuthorship W3105973609A5076503488 @default.
• W3105973609 hasAuthorship W3105973609A5078027374 @default.
• W3105973609 hasAuthorship W3105973609A5078486757 @default.
• W3105973609 hasAuthorship W3105973609A5083815082 @default.
• W3105973609 hasAuthorship W3105973609A5087320960 @default.
• W3105973609 hasBestOaLocation W31059736091 @default.
• W3105973609 hasConcept C110738630 @default.
• W3105973609 hasConcept C136525101 @default.

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