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- W3105979894 abstract "The control of the electron spin by external means is a key issue for spintronic devices. Using spin- and angle-resolved photoemission spectroscopy (SARPES) with three-dimensional spin detection, we demonstrate operando electrostatic spin manipulation in ferroelectric α−GeTe and multiferroic Ge1−xMnxTe. We demonstrate for the first time electrostatic spin manipulation in Rashba semiconductors due to ferroelectric polarization reversal. Additionally, we are also able to follow the switching pathway in detail. In multiferroic Ge1−xMnxTe operando SARPES reveals switching of the perpendicular spin component due to electric-field-induced magnetization reversal. This provides firm evidence of magnetoelectric coupling which opens up functionality with a multitude of spin-switching paths in which the magnetic and electric order parameters are coupled through ferroelastic relaxation paths. This work thus provides a new type of magnetoelectric switching intertwined with Rashba-Zeeman splitting in a multiferroic system.3 MoreReceived 9 July 2017Revised 8 March 2018DOI:https://doi.org/10.1103/PhysRevX.8.021067Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article’s title, journal citation, and DOI.Published by the American Physical SocietyPhysics Subject Headings (PhySH)Research AreasElectronic structureFerroelectric domainsFerromagnetismSpin-orbit couplingSpintronicsTopological materialsCondensed Matter, Materials & Applied Physics" @default.
- W3105979894 created "2020-11-23" @default.
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- W3105979894 date "2018-06-18" @default.
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- W3105979894 title "<i>Operando</i> Imaging of All-Electric Spin Texture Manipulation in Ferroelectric and Multiferroic Rashba Semiconductors" @default.
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- W3105979894 doi "https://doi.org/10.1103/physrevx.8.021067" @default.
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