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- W3106607148 abstract "The paper describes the features of the MBE growth process of AlSb / InAs heterostructures with a high-mobility two-dimensional electron gas for UHF transistors with ultra-low power consumption. The main stages of manufacturing transistors based on AlSb / InAs heterostructures are outlined. The drain and transfer characteristics of transistors are presented and discussed." @default.
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- W3106607148 date "2021-01-01" @default.
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- W3106607148 title "AlSb/InAs-гетероструктуры для СВЧ-транзисторов" @default.
- W3106607148 doi "https://doi.org/10.21883/pjtf.2021.03.50574.18588" @default.
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