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- W3107247530 abstract "Abstract GeAs is a layered material of the IV–V groups that is attracting growing attention for possible applications in electronic and optoelectronic devices. In this study, exfoliated multilayer GeAs nanoflakes are structurally characterized and used as the channel of back-gate field-effect transistors. It is shown that their gate-modulated p-type conduction is decreased by exposure to light or electron beam. Moreover, the observation of a field emission (FE) current demonstrates the suitability of GeAs nanoflakes as cold cathodes for electron emission and opens up new perspective applications of two-dimensional GeAs in vacuum electronics. FE occurs with a turn-on field of ∼80 <?CDATA ${text{V}};mu {{text{m}}^{ - 1}}$?> <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML overflow=scroll> <mml:mrow> <mml:mtext>V</mml:mtext> </mml:mrow> <mml:mi>μ</mml:mi> <mml:mrow> <mml:msup> <mml:mrow> <mml:mtext>m</mml:mtext> </mml:mrow> <mml:mrow> <mml:mo>−</mml:mo> <mml:mn>1</mml:mn> </mml:mrow> </mml:msup> </mml:mrow> </mml:math> and attains a current density higher than 10 <?CDATA ${text{A}};{text{c}}{{text{m}}^ - }^{text{2}}$?> <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML overflow=scroll> <mml:mrow> <mml:mtext>A</mml:mtext> </mml:mrow> <mml:mrow> <mml:mtext>c</mml:mtext> </mml:mrow> <mml:msup> <mml:mrow> <mml:msup> <mml:mrow> <mml:mtext>m</mml:mtext> </mml:mrow> <mml:mo>−</mml:mo> </mml:msup> </mml:mrow> <mml:mrow> <mml:mtext>2</mml:mtext> </mml:mrow> </mml:msup> </mml:math> , following the general Fowler–Nordheim model with high reproducibility." @default.
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- W3107247530 date "2020-12-22" @default.
- W3107247530 modified "2023-10-10" @default.
- W3107247530 title "Field emission from two-dimensional GeAs" @default.
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- W3107247530 doi "https://doi.org/10.1088/1361-6463/abcc91" @default.
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