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- W3107328444 abstract "Substitutional doping is the prominent way to modify the photoanode of the photoelectrochemical system by which its response to solar spectrum can be manipulated. Here, we introducing the transition metal Cr into the CdSe host lattice to investigate the photoelectrochemical (PEC) performance. The Cr doped CdSe thins films were deposited by periodic cyclic voltammetry method. XRD and Raman spectroscopy confirm the cubic phase of all grown films with the good substitution of Cr3+ is on Cd2+ lattice site in CdSe host lattice. Surface morphology and compositional conformation were studied by SEM and EDAX. Transmission electron microscopy shows the good polycrystalline nature of all deposited samples. The Cr substitution in CdSe host lattice enhances the visible light absorption due to an increase in the specific surface area of the film. The photoelectrochemical (PEC) performance was investigated using the three-electrode system which reveals that the optimum level doping (0.2 M) of Cr into CdSe enhances the photocurrent density and responsivity by ~3 times in comparison to pure CdSe thin film. Our results confirmed that Cr is the attractive dopant to modify the photoelectrochemical activity of the CdSe thin film." @default.
- W3107328444 created "2020-12-07" @default.
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- W3107328444 date "2021-05-01" @default.
- W3107328444 modified "2023-09-24" @default.
- W3107328444 title "Superior electrochemical activity of CdSe thin film by chromium substitutional doping" @default.
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- W3107328444 doi "https://doi.org/10.1016/j.jallcom.2020.158016" @default.
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