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• W3109458864 abstract "Maximum oscillation frequency (f <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>MAX</sub> ) of mmwave transistors is one of the key figures of merit (FOMs) for evaluating the HF-performance of a given technology. However, accurate measurements of f <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>MAX</sub> are very difficult. Determination of f <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>MAX</sub> is significantly affected by the measurement uncertainties in the admittance (y) parameters. In order to get rid of the random measurement error and to obtain a reliable and stable f <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>MAX</sub> value, the frequency dependent y-parameters are described by rational functions formulated from the small-signal hybrid π-model of the transistor under investigation. The parameters of these functions are determined following a least square error technique that minimizes the functional error with the measured data. The approach is especially useful for a fast and reliable evaluation of f <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>MAX</sub> value. Devices from two different SiGe and an FDSOI (Fully Depleted Silicon On Insulator) MOS technology are measured and stable f <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>MAX</sub> values are estimated following this approach." @default.
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• W3109458864 date "2021-01-01" @default.
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• W3109458864 title "Reliable Technology Evaluation of SiGe HBTs and MOSFETs: <i>f_MAX </i> Estimation From Measured Data" @default.
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• W3109458864 doi "https://doi.org/10.1109/led.2020.3040891" @default.
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