Matches in SemOpenAlex for { <https://semopenalex.org/work/W3110193762> ?p ?o ?g. }
Showing items 1 to 60 of
60
with 100 items per page.
- W3110193762 abstract "The recent progress and primary challenges in GaN power devices are reviewed and discussed in this chapter. The interface/border trapping at/near the dielectric/ GaN interface in MIS-gate GaN transistor, as well as the hole deficiency in p-GaN HEMT with a Schottky gate, could result in the gate instability issue. The negatively charged states in the gate region would cause a positive VTH shift, whereas the reduced gate overdrive voltage (VG _ ON-VTH ) at a preset VG_oN value could lead to the dynamic RoN increase. The gate instability -induced dynamic RON degradation can be alleviated with a sufficient gate overdrive. For normally-off MIS-gate GaN transistors, the gate instability-induced dynamic RoN can be further reduced by increasing the channel mobility in the recessed gate region and reducing the channel resistance. A monolithically integrated gate driver is desirable from the perspective of gate reliability for p-GaN HEMT with limited gate drive headroom. Meanwhile, bulk trapping in the III-nitride buffer stack could also cause dynamic RON degradation in GaN-on-Si devices. The buffer-related dynamic RoN degradation can be suppressed by compensating the negative buffer traps with hole injection, or through buffer stack optimization with carefully introduced positive charges. On the other hand, the emerging vertical GaN-on-GaN power devices are capable of delivering superior dynamic performance, owing to the low susceptibility of the vertical current path to surface trapping and the minimized bulk trapping in the high-quality homo-epitaxial GaN drift layer with precisely controlled background/compensation impurities." @default.
- W3110193762 created "2020-12-07" @default.
- W3110193762 creator A5048884856 @default.
- W3110193762 creator A5052409979 @default.
- W3110193762 date "2020-10-15" @default.
- W3110193762 modified "2023-10-16" @default.
- W3110193762 title "GaN metal-insulator-semiconductor field-effect transistors" @default.
- W3110193762 doi "https://doi.org/10.1049/pbpo152e_ch9" @default.
- W3110193762 hasPublicationYear "2020" @default.
- W3110193762 type Work @default.
- W3110193762 sameAs 3110193762 @default.
- W3110193762 citedByCount "0" @default.
- W3110193762 crossrefType "book-chapter" @default.
- W3110193762 hasAuthorship W3110193762A5048884856 @default.
- W3110193762 hasAuthorship W3110193762A5052409979 @default.
- W3110193762 hasConcept C11918236 @default.
- W3110193762 hasConcept C119599485 @default.
- W3110193762 hasConcept C127413603 @default.
- W3110193762 hasConcept C162057924 @default.
- W3110193762 hasConcept C165801399 @default.
- W3110193762 hasConcept C166972891 @default.
- W3110193762 hasConcept C171250308 @default.
- W3110193762 hasConcept C172385210 @default.
- W3110193762 hasConcept C192562407 @default.
- W3110193762 hasConcept C195370968 @default.
- W3110193762 hasConcept C2778413303 @default.
- W3110193762 hasConcept C2778871202 @default.
- W3110193762 hasConcept C2779227376 @default.
- W3110193762 hasConcept C49040817 @default.
- W3110193762 hasConceptScore W3110193762C11918236 @default.
- W3110193762 hasConceptScore W3110193762C119599485 @default.
- W3110193762 hasConceptScore W3110193762C127413603 @default.
- W3110193762 hasConceptScore W3110193762C162057924 @default.
- W3110193762 hasConceptScore W3110193762C165801399 @default.
- W3110193762 hasConceptScore W3110193762C166972891 @default.
- W3110193762 hasConceptScore W3110193762C171250308 @default.
- W3110193762 hasConceptScore W3110193762C172385210 @default.
- W3110193762 hasConceptScore W3110193762C192562407 @default.
- W3110193762 hasConceptScore W3110193762C195370968 @default.
- W3110193762 hasConceptScore W3110193762C2778413303 @default.
- W3110193762 hasConceptScore W3110193762C2778871202 @default.
- W3110193762 hasConceptScore W3110193762C2779227376 @default.
- W3110193762 hasConceptScore W3110193762C49040817 @default.
- W3110193762 hasLocation W31101937621 @default.
- W3110193762 hasOpenAccess W3110193762 @default.
- W3110193762 hasPrimaryLocation W31101937621 @default.
- W3110193762 hasRelatedWork W10191291 @default.
- W3110193762 hasRelatedWork W1065297 @default.
- W3110193762 hasRelatedWork W14230618 @default.
- W3110193762 hasRelatedWork W21379885 @default.
- W3110193762 hasRelatedWork W23864469 @default.
- W3110193762 hasRelatedWork W28682312 @default.
- W3110193762 hasRelatedWork W29271015 @default.
- W3110193762 hasRelatedWork W36676697 @default.
- W3110193762 hasRelatedWork W49516306 @default.
- W3110193762 hasRelatedWork W9030389 @default.
- W3110193762 isParatext "false" @default.
- W3110193762 isRetracted "false" @default.
- W3110193762 magId "3110193762" @default.
- W3110193762 workType "book-chapter" @default.