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• W3110690547 abstract "First-principles-based device models are in demand in the semiconductor industry to assess the impact of new materials at very early phases of the technology development. Existing models for the 2D metal–oxide–semiconductor field-effect transistor work under quasi-static limit and can only be used for designing circuits operating under half of the transistor's intrinsic cut-off frequency. Here, we develop a compact device model for phosphorene-based transistor that takes into account its band structure anisotropy as well as the carrier inertia, which is crucial for high-frequency operation. In a multi-scale approach, density functional theory based calculation is first carried out to obtain the material specific parameters, which are then used to develop a continuity equation based non-quasi-static model to gain insight into the high-frequency behaviors. We find that channel orientation has a strong impact on both the low and high frequency conductances; however, it affects only the high-frequency component of capacitances. The model is then implemented in an industry-standard circuit simulator using relaxation-time-approximation technique and simulations are conducted to demonstrate its applicability for near cut-off frequency circuit operation. The proposed modeling methodology, which connects material to circuit, thus helps us to expand the design space, where technology downscaling could be very challenging and expensive." @default.
• W3110690547 created "2020-12-21" @default.
• W3110690547 creator A5027019070 @default.
• W3110690547 creator A5045054657 @default.
• W3110690547 date "2020-12-17" @default.
• W3110690547 modified "2023-10-16" @default.
• W3110690547 title "A predictive model for high-frequency operation of two-dimensional transistors from first-principles" @default.
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• W3110690547 doi "https://doi.org/10.1063/5.0030633" @default.
• W3110690547 hasPublicationYear "2020" @default.
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