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• W3111104210 abstract "In this work, we reported a reactive ion etching of PbSe thin films on silicon in CH4/H2/Ar plasma atmosphere. Various etching parameters that affect dc self-bias, the etching rate and the etching smoothness of the surface and sidewalls, including rf power, gas ratio, and process pressure, have been systematically investigated. It is found that the dc self-bias has an approximate linear relationship with rf power, but it decreases as the process pressure increases. The etching rate increases with increasing rf power and decreasing process pressure. Additionally, the etching rate increases to the maximum as CH4 percentage increases to 40%, beyond which it decreases with further increasing CH4 percentage due to formation of polymer. Furthermore, SEM results show that for all investigated samples except one etched in atmosphere with 60% CH4, the etched surfaces are smooth, and the sidewalls are vertical. The etched profile of sample etched in atmosphere with 60% CH4 is very rough, which should be attributed to formation of polymer as well." @default.
• W3111104210 created "2020-12-21" @default.
• W3111104210 creator A5082519587 @default.
• W3111104210 creator A5083611634 @default.
• W3111104210 date "2021-03-01" @default.
• W3111104210 modified "2023-09-26" @default.
• W3111104210 title "Reactive ion etching of PbSe thin films in CH4/H2/Ar plasma atmosphere" @default.
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• W3111104210 doi "https://doi.org/10.1016/j.mssp.2020.105596" @default.
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