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• W3111241393 abstract "The forward and reverse I-V characteristics of Anode-Gate diodes passivated with pyrogenic and dry oxide in4H-SiC gate turn-off thyristor (GTO) were investigated by device size dependent measurement. The bulk and surface current component were manifested and separated, where the surface recombination velocity was accurately evaluated as 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>5</sup> -10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>6</sup> cm/s. Pyrogenic oxide was found more effective than dry oxide to suppress surface traps induced excess carrier recombination and carrier generation at etched p <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>+</sup> n mesa sidewall. Moreover, temperature dependent measurement revealed that excess current of Anode-Gate diodes is primarily attributed to carrier recombination and generation from surface traps. Surface traps dominates the reverse leakage below 125 °C, while electrically active bulk defects contributes to the reverse leakage simultaneously at elevated temperature. Finally, the influence of passivation on the 4H-SiC GTOs forward characteristics was demonstrated. Higher gate trigger current needed to switch from blocking to conduction state for the 4H-SiC GTOs with dry oxide passivated Anode-Gate mesa sidewall." @default.
• W3111241393 created "2020-12-21" @default.
• W3111241393 creator A5075570318 @default.
• W3111241393 date "2021-01-01" @default.
• W3111241393 modified "2023-10-16" @default.
• W3111241393 title "Surface Recombination and Excess Current of Anode-Gate Mesa Sidewall in 4H-SiC Gate Turn-Off Thyristor" @default.
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• W3111241393 doi "https://doi.org/10.1109/tnano.2020.3043235" @default.
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