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• W3111305373 abstract "This work reports a method to reduce the process thermal budget in metal oxide (MO) thin-film transistors (TFTs). Using the thermal curing of a fluorinated polyimide planarization (PLN) layer as an efficient device activation process, this method eliminates the need for additional annealing steps before the existing PLN process in the fabrication. Bottom-gated TFTs with indium tin oxide (ITO)stabilized ZnO channels were fabricated by this method and exhibited improved electrical characteristics over control devices made with a higher thermal budget. A steep subthreshold swing of 82.8 mV/decade and a high on-off ratio of 1.3 × 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>10</sup> were achieved. This improvement can be attributed to the fluorine diffusion from the PLN layer to the MO channels during the curing step. This method is useful for the cost-effective production of active-matrix flatpanel display (AM-FPD) panels and the implementation of MO TFTs on flexible substrates." @default.
• W3111305373 created "2020-12-21" @default.
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• W3111305373 date "2021-02-01" @default.
• W3111305373 modified "2023-10-03" @default.
• W3111305373 title "Thermal Budget Reduction in Metal Oxide Thin-Film Transistors via Planarization Process" @default.
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• W3111305373 doi "https://doi.org/10.1109/led.2020.3045018" @default.
• W3111305373 hasPublicationYear "2021" @default.
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