Matches in SemOpenAlex for { <https://semopenalex.org/work/W3112236797> ?p ?o ?g. }
- W3112236797 abstract "We perform a comparative study on the transfer velocity of charge carriers across two-dimensional and (2D) three-dimensional (3D) graphene-silicon and 3D-3D $mathrm{Au}$-silicon Schottky junctions. Within the framework of classical thermionic emission theory, the transfer velocity of carriers across the $mathrm{Au}$-$mathrm{Si}$ interface is determined as $overline{v}ensuremath{sim}{10}^{7}$ cm/s that is thoroughly consistent with the average thermal velocity of carriers in silicon. In contrast, the graphene-$mathrm{Si}$ interface discloses a much lower transfer velocity of $overline{v}ensuremath{sim}{10}^{1}$ cm/s, i.e., nearly 6 orders of magnitude smaller than the thermal velocity of carriers in silicon. Utilizing the ${T}^{1}$ universal scaling law for vertical 2D-3D Schottky junctions, we determine the effective out-of-plane velocity of charge carriers in graphene as ${v}_{ensuremath{perp}}^{ensuremath{ast}}ensuremath{sim}{10}^{0}$ cm/s. This indicates current flow across the graphene-$mathrm{Si}$ contact is substantially limited by ${v}_{ensuremath{perp}}^{ensuremath{ast}}$. Moreover, by analyzing experimental activation-energy data, we uncover a general correlation between the kinetics of charge carriers and the potential barrier at the graphene-$mathrm{Si}$ interface. It is found that the transfer velocity increases almost exponentially with the Schottky barrier height, which cannot be explained in the framework of classical theory. Considering nonconserving ${mathbf{k}}_{ensuremath{parallel}}$ scattering strength as an exponential function of Schottky barrier height, ${T}^{1}$ scaling theory leads to a comprehensive interpretation of experimental data. This study sheds light on the electronic processes across 2D-3D interfaces." @default.
- W3112236797 created "2020-12-21" @default.
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- W3112236797 date "2020-12-15" @default.
- W3112236797 modified "2023-10-10" @default.
- W3112236797 title "Kinetics of Charge Carriers across a Graphene-Silicon Schottky Junction" @default.
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- W3112236797 doi "https://doi.org/10.1103/physrevapplied.14.064048" @default.
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