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- W3112560322 abstract "Herein, we characterize resistive random access memory (RRAM) devices containing an oxygen-deficient layer. The RRAM devices consist of multiple layered NiO thin films that consist of an oxygen-deficient NiO0.95 layer, within a NiO/NiO0.95/NiO layer structure. The NiO thin-film layers were deposited on Pt/Ta/SiO2/Si substrates by radio frequency magnetron sputtering. The stoichiometry and thickness of the NiO triple-layer thin films were determined by Auger electron spectroscopy. We fabricated RRAM capacitors with a structure of Pt/NiO/NiO0.95/NiO/Pt to investigate the resistive switching characteristics. The presence of an oxygen-deficient layer significantly lowers the forming and SET/RESET voltages compared to a Pt/NiO/Pt RRAM capacitor. This reduces the energy required to form conducting filaments in the oxygen-deficient layer. Moreover, the forming and SET/RESET voltages exhibit reduced dispersion due to the relatively high oxygen vacancy density in the oxygen-deficient NiO0.95 layer." @default.
- W3112560322 created "2020-12-21" @default.
- W3112560322 creator A5008147057 @default.
- W3112560322 creator A5072650765 @default.
- W3112560322 date "2021-04-01" @default.
- W3112560322 modified "2023-10-11" @default.
- W3112560322 title "Resistive random access memory characteristics of NiO thin films with an oxygen-deficient NiO0.95 layer" @default.
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- W3112560322 doi "https://doi.org/10.1016/j.ceramint.2020.12.064" @default.
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