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• W3113010195 abstract "Abstract The state-of-the-art perovskite solar cells (PSCs) with SnO 2 electron transporting material (ETL) layer displays the probability of conquering the low electron mobility and serious leakage current loss of the TiO 2 ETL layer in photoelectronic devices. The rapid development of SnO 2 ETL layer has brought perovskite efficiencies >20%. However, high density of defect states and voltage loss of high temperature SnO 2 are still latent impediment for the long-term stability and hysteresis effect of photovoltaics. Herein, Nb 5+ doped SnO 2 with deeper energy level is utilized as a compact ETL for printable mesoscopic PSCs. It promotes carrier concentration increase caused by n-type doping, assists Fermi energy level and conduction band minimum to move the deeper energy level, and significantly reduces interface carrier recombination, thus increasing the photovoltage of the device. As a result, the use of Nb 5+ doped SnO 2 brings high photovoltage of 0.92 V, which is 40 mV higher than that of 0.88 V for device based on SnO 2 compact layer. The resulting PSCs displays outstanding efficiency of 13.53%, which contains an ∼10% improvements compared to those without Nb 5+ doping. Our study emphasizes the significance of element doping for compact layer and lays the groundwork for high efficiency PSCs." @default.
• W3113010195 created "2020-12-21" @default.
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• W3113010195 date "2021-01-13" @default.
• W3113010195 modified "2023-10-02" @default.
• W3113010195 title "Improved photovoltage of printable perovskite solar cells via Nb⁵⁺ doped SnO₂ compact layer" @default.
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• W3113010195 doi "https://doi.org/10.1088/1361-6528/abd207" @default.
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• W3113010195 hasPublicationYear "2021" @default.
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